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| savantic semiconductor product specification silicon npn power transistors 2n6671 2N6672 2n6673 description with to-3 package low saturation voltage fast switching speed high voltage ratings applications off-line power supplies high-voltage inverters switching regulators pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2n6671 450 2N6672 550 v cbo collector-base voltage 2n6673 open emitter 650 v 2n6671 300 2N6672 350 v ceo collector-emitter voltage 2n6673 open base 400 v v ebo emitter-base voltage open collector 8 v i c collector current 8 a i cm collector current-peak 10 a i b base current 4 a p d total power dissipation t c =25 150 w t j junction temperature 200 t stg storage temperature -65~200 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2n6671 2N6672 2n6673 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2n6671 300 2N6672 350 v ceo(sus) collector-emitter sustaining voltage 2n6673 i c =0.2a ;i b =0 400 v v cesat-1 collector-emitter saturation voltage i c =5a; i b =1a 1.0 v v cesat-2 collector-emitter saturation voltage i c =8a ;i b =4a 2.0 v v besat base-emitter saturation voltage i c =5a; i b =1a 1.6 v 2n6671 v ce =450v; v be(off) =-1.5v 2N6672 v ce =550v; v be(off) =-1.5v i cev collector cut-off current 2n6673 v ce =650v; v be(off) =-1.5v 0.1 ma i ebo emitter cut-off current v eb =8v; i c =0 2.0 ma h fe dc current gain i c =5a ; v ce =3v 10 40 c ob output capacitance i e =0 ; v cb =10v;f=0.1mhz 300 pf f t transition frequency i c =0.2a ; v ce =10v 15 60 mhz thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.17 /w savantic semiconductor product specification 3 silicon npn power transistors 2n6671 2N6672 2n6673 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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